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MOSFET degradation due to stressing of thin oxide

✍ Scribed by Mong-Song Liang; Chi Chang; Yew Tong Yeow; Chenming Hu; Brodersen, R.W.


Book ID
114594849
Publisher
IEEE
Year
1984
Tongue
English
Weight
689 KB
Volume
31
Category
Article
ISSN
0018-9383

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Effect of reverse substrate bias on ultr
✍ Yao Zhao; Mingzhen Xu; Changhua Tan πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 169 KB

Degradation of ultra-thin gate oxide n-MOSFET with halo structure is studied under different stress modes with the increase of reverse substrate bias. The variation of device degradation is characterized by monitoring the substrate current during stress. When the gate voltage is smaller than a criti