Depth profiles of photoluminescence (PL) and Raman scattering properties of anodized porous Si have been studied by micro-measurement techniques. The depthstructural-inhomogeneity strongly affects the optical properties of porous Si. The Si 2p absorption edge of porous Si has been examined with sync
β¦ LIBER β¦
Morphology, Raman scattering and photoluminescence of porous GaAs layers
β Scribed by N. Dmitruk; S. Kutovyi; I. Dmitruk; I. Simkiene; J. Sabataityte; N. Berezovska
- Book ID
- 108263758
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 569 KB
- Volume
- 126
- Category
- Article
- ISSN
- 0925-4005
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