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Morphology and Formation Mechanisms of Porous Silicon

โœ Scribed by Zhang, X. G.


Book ID
118023347
Publisher
The Electrochemical Society
Year
2004
Tongue
English
Weight
323 KB
Volume
151
Category
Article
ISSN
0013-4651

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It is experimentally shown, in porous silicon formation, that there is an increase in dissolution rate at fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from the oxidation of molecular hydrogen at hydrogen-covered sites. The increase in dissolution rate