Anodically grown porous silicon structure: formation mechanisms

✍ Scribed by D.M. Soares; M.C. dos Santos; O. Teschke

• Book ID: 103035422
• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 397 KB
• Volume: 242
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(95)00700-e

✦ Synopsis

It is experimentally shown, in porous silicon formation, that there is an increase in dissolution rate at fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from the oxidation of molecular hydrogen at hydrogen-covered sites. The increase in dissolution rate in the presence of excess charge at the fluorine-covered sites is investigated theoretically by a semi-empirical Hartree-Fock calculation which shows that this spatially variable dissolution generates the porous silicon structure.