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Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate

✍ Scribed by Patriarche, G.; Largeau, L.; Harmand, J.-C.; Gollub, D.

Book ID
125469896
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
380 KB
Volume
84
Category
Article
ISSN
0003-6951

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We present a study of the electronic properties of \(\mathrm{In}_{x} \mathrm{Ga}_{1-x} \mathrm{As} / \mathrm{GaAs}\) quantum wells when grown on vicinal substrates, based on photoluminescence (PL) and PL excitation experiments under high magnetic field. The samples measured have a wide range of In c