Hydrothermally grown ZnO buffer layer fo
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Seung Wook Shin; Ye Bin Kwon; A.V. Moholkar; Gi-Seok Heo; In Ok Jung; Jong-Ha Mo
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Article
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2011
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Elsevier Science
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English
⚖ 782 KB
Gallium (4 wt%) doped ZnO (GZO) thin films were deposited on hydrothermally grown ZnO buffered and non-buffered MgAl 2 O 4 (1 1 1) substrates by RF magnetron sputtering technique at a growth temperature of 250 1C. The epitaxial ZnO buffer layer was deposited on the MgAl 2 O 4 (1 1 1) substrate by a