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Monte Carlo Simulation of Semiconductor Devices

✍ Scribed by C. Moglestue (auth.)


Publisher
Springer Netherlands
Year
1993
Tongue
English
Leaves
343
Edition
1
Category
Library

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✦ Synopsis


Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indiΒ­ vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.

✦ Table of Contents


Front Matter....Pages i-x
The Foundation of Modelling....Pages 1-10
Essential Crystallography and Crystal Dynamics....Pages 11-38
Electrons....Pages 39-78
Lattice-Electron Interaction....Pages 79-114
The Monte Carlo Method....Pages 115-129
Simulation of Bulk Properties of Solids....Pages 130-160
The Field Equation....Pages 161-172
Steady State Simulation of Devices....Pages 173-201
Alternating Current, Microwaves....Pages 202-215
Composite Material Devices....Pages 216-242
Ambipolar Devices....Pages 243-266
Noise....Pages 267-290
Computers: Scope of Modelling....Pages 291-298
Back Matter....Pages 299-334

✦ Subjects


Simulation and Modeling; Electronics and Microelectronics, Instrumentation; Probability Theory and Stochastic Processes; Electrical Engineering; Statistics, general


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