<p>Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encount
Hierarchical Device Simulation: The Monte-Carlo Perspective
โ Scribed by PD Dr.-Ing. Christoph Jungemann, Prof. Dr. Bernd Meinerzhagen (auth.)
- Publisher
- Springer-Verlag Wien
- Year
- 2003
- Tongue
- English
- Leaves
- 277
- Series
- Computational Microelectronics
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development.
โฆ Table of Contents
Front Matter....Pages i-xvi
Introduction....Pages 1-13
Semiclassical Transport Theory....Pages 14-33
The Monte-Carlo Method....Pages 34-56
Scattering Mechanisms....Pages 57-73
Full-Band Structure....Pages 74-98
Device Simulation....Pages 99-129
Momentum-Based Transport Models....Pages 130-161
Stochastic Properties of Monte-Carlo Device Simulations....Pages 162-180
Results....Pages 181-250
Back Matter....Pages 251-261
โฆ Subjects
Electronics and Microelectronics, Instrumentation;Optical and Electronic Materials;Numerical and Computational Physics;Statistics for Engineering, Physics, Computer Science, Chemistry and Earth Sciences;Computational Intelligence
๐ SIMILAR VOLUMES
<p>The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and spe
<p>Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and