A computer model for Monte Carlo simulations of molecular beam epitaxial growth of A 1Β°B" semiconductors is described. The model is intended for IBM compatible microcomputers such as the AT 386/387. Some peculiaritis of the algorithm, which allow to simulate the growth process on a sufficiently larg
Monte Carlo simulation of molecular beams in a hot-wall epitaxy system
β Scribed by Stefan K Stefanov
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 829 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract We present a method of parallelizing flat histogram Monte Carlo simulations, which give the free energy of a molecular system as an output. In the serial version, a constant probability distribution, as a function of any system parameter, is calculated by updating an external potential
We study weak localization effects in the ballistic regime as induced by man-made scatterers. Specular reflection of the electrons off these scatterers causes backscattered trajectories to occur, which interfere with their time-reversed path resulting in weak localization corrections to the resistan