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Monte Carlo simulation of electron transport in simple orthorhombically strained silicon

✍ Scribed by Wang, Xin; Kencke, D. L.; Liu, K. C.; Tasch, A. F.; Register, L. F.; Banerjee, S. K.

Book ID: 120588459
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 520 KB
Volume: 88
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1311304

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