Vertical electron transport in semiconductor superlattices Monte Carlo simulation

✍ Scribed by J. Voves

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 244 KB
• Volume: 35
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(95)01393-8

✦ Synopsis

The possibility of using a semiclassical model based on the Monte Carlo method for the semiconductor superlattice vertical electron transport simulation is studied. The model presented deals with the perfectly periodic and infinitely long superlattice. The effective mass and electron velocity in the miniband can be evaluated analytically from the dispersion relation using the Kronig-Penney model. The standard Monte Carlo transport simulation, including most important features of electron transport through the superlattice mmibands, is used. Inelastic acoustic phonon, polar optical phonon and ionized impurity scattering are considered in the bulk formalism. The Monte Carlo model has been applied on CdTe-CdMnTe superlattice simulation with one miniband for conductance electrons. The temperature dependence and variation of the average values of velocity, energy and diffusivity in a low electric field in the vertical direction are studied.