✦ LIBER ✦

Monte Carlo calculations on spatial distribution of implanted ions in silicon

✍ Scribed by Desalvo, A. ;Rosa, R.

Book ID: 121410733
Publisher: Informa UK (Taylor & Francis)
Year: 1976
Weight: 421 KB
Volume: 31
Category: Article
ISSN: 0033-7579
DOI: 10.1080/00337577608234778

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Defect distribution in ion-implanted sil

Defect distribution in ion-implanted silicon. A Monte Carlo simulation

✍ Mazzone, A. M. 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 369 KB

Monte Carlo calculation of one- and two-

Monte Carlo calculation of one- and two-dimensional particle and damage distributions for ion-implanted dopants in silicon

✍ Albers, J. 📂 Article 📅 1985 🏛 IEEE 🌐 English ⚖ 964 KB

Monte Carlo simulation of silicon amorph

Monte Carlo simulation of silicon amorphization during ion implantation

✍ Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 245 KB

Monte Carlo simulation of two-dimensiona

Monte Carlo simulation of two-dimensional distributions of implanted ions in a crystalline silicon target

✍ A.M. Mazzone 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 507 KB

Monte Carlo calculations of quasidiffusi

Monte Carlo calculations of quasidiffusion in silicon

✍ S. Tamura 📂 Article 📅 1993 🏛 Springer US 🌐 English ⚖ 311 KB

Monte-Carlo simulations of ion track in

Monte-Carlo simulations of ion track in silicon and influence of its spatial distribution on single event effects

✍ T. Colladant; A. L’Hoir; J.E. Sauvestre; O. Flament 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 585 KB

High energy interaction of heavy ions with silicon integrated circuits contribute to transient events or single event effects (SEE) when ionizing the device along the particle path. Knowledge of the electron-hole pair density in the ion track is necessary for studying collected charge and estimating