𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Monte Carlo calculation of the low-temperature mobility of two-dimensional electrons in a quantum well in a selectively doped GaAs-based heterostructure

✍ Scribed by V. M. Borzdov; S. G. Mulyarchik; A. V. Khomich


Book ID
110123426
Publisher
SP MAIK Nauka/Interperiodica
Year
1997
Tongue
English
Weight
69 KB
Volume
23
Category
Article
ISSN
1063-7850

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Electron transport properties of AlGaAs/
✍ Rekaya, S. ;BouzaΓ―ene, L. ;Sfaxi, L. ;Hjiri, M. ;Contreras, S. ;Robert, J. L. ;M πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 173 KB

## Abstract Electronic properties of the Si δ‐doped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon (__x__~Al~(Si)) is varied. Shubnikov–de Haas and quantum Hall effect measurements at 4.2 K ha