✦ LIBER ✦

Monte Carlo Analysis of Si/SiGe MODFET Performance Potential

✍ Scribed by S. Roy; A. Asenov; S. Babiker; J. R. Barker; S. P. Beaumont

Book ID: 101377318
Publisher: John Wiley and Sons
Year: 1997
Tongue: English
Weight: 140 KB
Volume: 204
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(199711)204:1<525::aid-pssb525>3.0.co;2-v

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study of Nonstationary Transport in Si/S

Study of Nonstationary Transport in Si/Si0.7Ge0.3 n-MODFET Using Monte Carlo Simulation

✍ Ph. Dollfus 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 180 KB 👁 1 views

Monte Carlo simulations of Ge segregatio

Monte Carlo simulations of Ge segregation in strained Si and SiGe alloys

✍ MatsI. Larsson; GöranV. Hansson 📂 Article 📅 1993 🏛 Elsevier Science ⚖ 77 KB

Monte Carlo analysis of electron heating

Monte Carlo analysis of electron heating in Si/SiO2 superlattices

✍ M. Rosini; C. Jacoboni; S. Ossicini 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 125 KB

Performance study of Si/CdTe semiconduct

Performance study of Si/CdTe semiconductor Compton telescopes with Monte Carlo simulation

✍ Hirokazu Odaka; Shin’ichiro Takeda; Shin Watanabe; Shin-nosuke Ishikawa; Masayos 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 569 KB

A Compton telescope with high angular resolution and high energy resolution is a promising detector for the next generation of astrophysics space missions aiming at hard X-rays and sub-MeV/MeV gamma-rays. We have been working on a semiconductor Compton camera based on silicon and cadmium telluride (

A semiempirical surface scattering model

A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

✍ A.T. Pham; C. Jungemann; C.D. Nguyen; B. Meinerzhagen 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 781 KB

A new hole surface scattering model for FBMC simulations is presented for unstrained Si and biaxially strained Si/SiGe PMOSFETs. The new scattering model was developed for quantum corrected spatial hole charge distributions at the Si/SiO 2 interface, where the quantum correction is based on the impr

Statistical performance analysis of nonl

Statistical performance analysis of nonlinear stochastic systems by the Monte Carlo method

✍ James H. Taylor 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 898 KB

Until the recent advent of extended covariance analysis utilizing quasi-linearization techniques, the only approach for assessing the performance of a nonlinear system with random inputs and initial conditions has been the monte carlo method. This method involves direct simulation, i.e., determining