Growth and Characterization of Direct-co
β
Dr. L. B. Chang; Dr. H. Lan
π
Article
π
1992
π
John Wiley and Sons
π
English
β 483 KB
Growth and Characterization of Direct-connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE High output power (above 3 mW/facet) AlGaAs/GaAs Transverse-Junction Stripe light emitting diodes have been grown on Semi-Insulating (100) GaAs substrates by Liquid Phase Epitaxy. These