The high e cient laser performance of self-Q-switched laser in the co-doped Cr 4+ ; Nd 3+ :YAG microchip with 1:8 mm thickness was demonstrated. The slope e ciency is varied with the re ectivity of output coupler at 1064 nm, and the highest slope e ciency of 26% was obtained for 95% re ectivity of o
β¦ LIBER β¦
Monolithic self-Q-switched Cr,Nd:YAG laser
β Scribed by Zhou, Shouhuan; Lee, K. K.; Chen, Y. C.; Li, Shiqun
- Book ID
- 115419538
- Publisher
- Optical Society of America
- Year
- 1993
- Tongue
- English
- Weight
- 269 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0146-9592
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Cr,Nd:YAG self-Q-switched laser with hig
β
Jun Dong; Peizhen Deng; Michael Bass
π
Article
π
2002
π
Elsevier Science
π
English
β 147 KB
Pre-pumped passively Q-switched Nd:YAG/C
β
Xinning Tian; Ping Yan; Qiang Liu; Mali Gong; Yun Liao
π
Article
π
2005
π
Optics InfoBase
π
English
β 367 KB
Dioder-pumped self-Q-switched Cr4+, Nd3+
β
Chen Jun; H. J. Eichler; Zhu Qi
π
Article
π
2001
π
SP Zhejiang University Press
π
English
β 432 KB
Self-Q-switched diode-end-pumped Cr,Nd:Y
β
Li, Shiqun; Zhou, Shouhuan; Wang, Pei; Chen, Y. C.; Lee, K. K.
π
Article
π
1993
π
Optical Society of America
π
English
β 254 KB
Passively Q-switched diode-pumped Cr4+:Y
β
Sebastien Forget; Frederic Druon; FranΓ§ois Balembois; Patrick Georges; Nicolas L
π
Article
π
2006
π
Elsevier Science
π
English
β 166 KB
The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO 4 crystal and a Cr 4+ :YAG saturable absorber. T
Diode pumped Nd:YAG laser repetitively Q
β
Qinyong Zeng; Yong Wan; Dayong Zhu; Kai Han
π
Article
π
2009
π
SP MAIK Nauka/Interperiodica
π
English
β 207 KB