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Monolithic hot electron transistors in GaAs with high current gain

โœ Scribed by J.M. Woodwock; J.J. Harris; J.M. Shannon


Book ID
103809388
Publisher
Elsevier Science
Year
1985
Weight
279 KB
Volume
134
Category
Article
ISSN
0378-4363

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Current gain deterioration in carbon-dop
โœ T. Ishibashi; H. Sugahara; H. Ito; T. Nittono; K. Nagata; O. Nakajima; J. Nagano ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 294 KB

We investigated the current gain deterioration in carbon-doped AIGaAs/GaAs heterojunction bipolar transitors (HBTs). Bias stress tests showed that mechanical stress can accelerate the gain reduction, since HBTs with a thicker SiN passivation layer have a shorter device life. The longest life was obt