๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Monolayer growth and direct writing of GaAs by pulsed laser metalorganic vapor phase epitaxy

โœ Scribed by S. Iwai; T. Meguro; A. Doi; Y. Aoyagi; S. Namba

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
257 KB
Volume
163
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Homoepitaxial Growth of ZnO by Metalorga
Homoepitaxial Growth of ZnO by Metalorganic Vapor Phase Epitaxy
โœ K. Ogata; T. Kawanishi; K. Sakurai; S.-W. Kim; K. Maejima; Sz. Fujita; Sg. Fujit ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 280 KB ๐Ÿ‘ 2 views

a), T. Kawanishi (b), K. Sakurai (b), S.-W. Kim (b), K. Maejima (b), Sz. Fujita (b, c), and Sg. Fujita (b) (a) Venture Business

Selective Growth of Cubic GaN on Pattern
Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
โœ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 180 KB ๐Ÿ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl