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Molecular Dynamics Study of the Switching Mechanism of Carbon-Based Resistive Memory

✍ Scribed by Yu He; Jinyu Zhang; Ximeng Guan; Liang Zhao; Yan Wang; He Qian; Zhiping Yu

Book ID
114620206
Publisher
IEEE
Year
2010
Tongue
English
Weight
702 KB
Volume
57
Category
Article
ISSN
0018-9383

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## Abstract We report an indium‐free transparent resistive switching random access memory (TRRAM) device based on a gallium‐doped zinc oxide (GZO)‐Ga~2~O~3~‐ZnO‐Ga~2~O~3~‐GZO structure grown by metal‐organic chemical vapor deposition. The bipolar resistive‐switching behavior is investigated based o