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Molecular-dynamics study of SiGe epitaxy on a Si substrate

โœ Scribed by K. Shintani; Y. Yano; M. Abe


Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
347 KB
Volume
3
Category
Article
ISSN
1862-6351

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The degradation of smooth SiGe epitaxial layer was investigated by transmission electron microscopy (TEM), X-ray reflectivity (XRR) and atomic force microscopy (AFM). It was shown from AFM results that the crosshatch was formed with increasing annealing temperature, which indicated the degradation o