## Abstract This paper presents results of a theoretical study of hypothetical insulating layers for semi‐conducting circuits. The dielectric material consists of C~60~ fullerenes interconnected by bridge molecules. The structural optimisation is carried out using quantum‐chemical methods. The pred
Molecular design of fullerene-based ultralow-kdielectrics
✍ Scribed by Wang, Yuekui ;Seifert, Gotthard ;Hermann, Helmut
- Book ID
- 105364406
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 435 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
The article [1] presents results of a quantum‐theoretical study of hypothetical interlayer dielectrics for semiconducting circuits. The configuration shown in the cover picture consists of two C~60~ fullerenes connected by a silicon‐containing C(COO)~2~Si~0.5~ molecule. This fullerene dimer acts as basic structural unit of a fullerene polymer proposed as a new insulating material with extremely low dielectric constant of k = 1.5 for application in future devices.
The work is a joint collaboration of IFW (H. Hermann), Technical University Dresden (G. Seifert), and AMD Saxony while Y. Wang was a guest scientist working on this project together with his co‐authors. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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