Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs
β Scribed by Jiao, Y H; Wu, J; Xu, B; Jin, P; Hu, L J; Liang, L Y; Ren, Y Y; Wang, Z G
- Book ID
- 111875577
- Publisher
- Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 629 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0957-4484
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π SIMILAR VOLUMES
We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo
One-dimensional 1D arrangement of self-organizing InAs dots was demonstrated on strained InGaAs buffer layers Ε½ . grown on mesa-strip-shaped GaAs substrates by molecular-beam epitaxy MBE . Large anisotropy of strain relaxation in the Ε½ . InGaAs buffer layer was observed by double crystal X-ray diffr