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Molecular-beam-epitaxy growth of strained Ga1−x InxAs/AlInAs/InP and application to 1.55 μm multi-quantum-well lasers

✍ Scribed by K. Nishikata; H. Shimizu; Y. Hirayama; T. Matsuda; F. Iwase; M. Irikawa

No coin nor oath required. For personal study only.

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