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Photoluminescence and X-ray diffraction studies of MBE-grown compressively strained InGaAs and InGaAlAs quantum wells for 1.55 μm laser diode applications

✍ Scribed by Woo-Young Choi; Clifton G. Fonstad


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
402 KB
Volume
127
Category
Article
ISSN
0022-0248

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