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Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe

✍ Scribed by D. Edwall; E. Piquette; J. Ellsworth; J. Arias; C. H. Swartz; L. Bai; R. P. Tompkins; N. C. Giles; T. H. Myers; M. Berding

No coin nor oath required. For personal study only.

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