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Molecular-beam-epitaxy growth of CdTe on InSb (110) monitored in situ by Raman spectroscopy

✍ Scribed by D. Drews; J. Sahm; W. Richter; D. R. T. Zahn


Book ID
124051344
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
919 KB
Volume
78
Category
Article
ISSN
0021-8979

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In situ Raman monitoring of the molecula
✍ Dietrich R. T. Zahn; Andreas Schneider; Dietrich Drews πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 243 KB πŸ‘ 2 views

Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 Γ„C without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign