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Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wires

โœ Scribed by Chao Jiang; Tsutomu Muranaka; Hideki Hasegawa

Book ID
104305719
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
360 KB
Volume
63
Category
Article
ISSN
0167-9317

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โœฆ Synopsis

Precise wire width control is important in forming dense networks of narrow InGaAs ridge quantum wires (QWRs) by selective MBE growth on patterned InP substrates. In this paper, SEM, TEM, AFM, CL and PL measurements were carried out to clarify the QWR formation mechanism and to establish the method of wire width control. Formation of the arrow-head shaped QWR is due to evolution of (114)A facets caused by instability of (113)A facets during growth of the InAlAs layer. From PL peak energy positions, it has been found that the effective wire width can be controlled by precisely adjusting the growth time, or the grown thickness of the lower InAlAs layer.

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Control of morphology and wire width in
Control of morphology and wire width in InGaAs ridge quantum wires grown by atomic hydrogen-assisted selective molecular beam epitaxy
โœ Tsutomu Muranaka; Seiya Kasai; Chao Jiang; Hideki Hasegawa ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 213 KB

Growth controllabilities of morphology and wire width are systematically investigated for the InGaAs ridge quantum wires (QWRs) grown by the atomic hydrogen (H \* )-assisted selective molecular beam epitaxy (MBE) growth. Detailed scanning electron microscopy (SEM), photoluminescence (PL) and magneto