Continuous-wave laser operation at room temperature was obtained from a (Zn,Mg)(S,Se)-based II-VI separate-confinement heterostructure where injection of holes into the p-type quaternary was achieved through the employment of a Zn(Se,T) gradedbandgap contact. The laser devices exhibit threshold curr
β¦ LIBER β¦
Molecular beam epitaxial growth of ZnMgSSe and its application to blue and green laser diodes
β Scribed by M. Ikeda
- Book ID
- 124075194
- Publisher
- AVS (American Vacuum Society)
- Year
- 1995
- Tongue
- English
- Weight
- 399 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0734-2101
- DOI
- 10.1116/1.579808
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Molecular beam epitaxial growth and char
β
M.D. Ringle; D.C. Grillo; Y. Fan; L. He; J. Han; R.L. Gunshor; A. Salokatve; H.
π
Article
π
1994
π
Elsevier Science
π
English
β 309 KB
Molecular beam epitaxial growth and char
β
Dale L. Partin
π
Article
π
1981
π
Springer US
π
English
β 490 KB
Performance and degradation characterist
β
Tan, W. S. ;Kauer, M. ;Hooper, S. E. ;Smeeton, T. M. ;Bousquet, V. ;Rossetti, M.
π
Article
π
2009
π
John Wiley and Sons
π
English
β 362 KB
## Abstract This paper reports the state of the art performance for blueβviolet laser diodes (LD) grown by molecular beam epitaxy. Improvements in device design and growth have resulted in a threshold current density of 3.6 kA/cm^2^, which translates into improved cw lifetime of up to 42 hours. Red
Metalorganic vapor phase epitaxy growth
β
K. Yanashima; D. Yamasaki; S. Watabe; K. Hara; J. Yoshino; H. Hukimoto
π
Article
π
1994
π
Elsevier Science
π
English
β 280 KB
The molecular beam epitaxial growth of w
β
R.L. Gunshor; A.V. Nurmikko; N. Otsuka
π
Article
π
1993
π
Elsevier Science
π
English
β 595 KB
Chemical beam epitaxy growth of gainasp/
β
Takashi Uchida; Noriyuki Yokouchi; Tomoyuki Miyamoto; Fumio Koyama; Kenichi Iga
π
Article
π
1993
π
John Wiley and Sons
π
English
β 643 KB