Molecular beam epitaxial growth and characterization of II–VI blue-green laser diodes having continuous-wave operation at room temperature
✍ Scribed by M.D. Ringle; D.C. Grillo; Y. Fan; L. He; J. Han; R.L. Gunshor; A. Salokatve; H. Jeon; M. Hovinen; A.V. Nurmikko; G.C. Hua; N. Otsuka
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 309 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
Continuous-wave laser operation at room temperature was obtained from a (Zn,Mg)(S,Se)-based II-VI separate-confinement heterostructure where injection of holes into the p-type quaternary was achieved through the employment of a Zn(Se,T) gradedbandgap contact. The laser devices exhibit threshold current densities of below 300 A cm-2 and voltages below 6 V. Issues related to the control of the growth of the quaternary (Zn,Mg)(S,Se) compound are discussed and comments are made on the origins of device degradation.