Modification of the Si(111) 7 × 7 local electronic surface structure induced by silane adsorption

✍ Scribed by L. Bolotov; H. Rauscher; R.J. Behm

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 398 KB
• Volume: 243
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(95)00819-p

✦ Synopsis

The initial stages of Sill 4 adsorption on Si(lll) 7 X 7 at room temperature have been studied by scanning tunneling microscopy and scanning tunneling spectroscopy (differential conductivity method). A characteristic high conductivity triangular bridge between the comer hole center and the reacted adatom has been observed at a sample bias larger than + 1.5 V after Sill 4 adsorption, clearly different from the modifications in the spatial distribution of the differential conductivity signal induced by hydrogen adsorption alone. Likewise, the tunneling spectra over this site show a characteristic increase of the dI/dV signal. The spectroscopic data prove that after reaction both of the reaction products, Sill 3 and H, are adsorbed in close vicinity, in the comer hole (Sill 3) and on the adjacent Si comer adatom (H). The resulting comer complex leads to the triangle-like feature in the electronic structure.