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Modification of the chemical properties of silicon by ion implantation with high doses of Ar and P

✍ Scribed by R. Ross; M. T. Pham

Book ID
112766140
Publisher
Springer
Year
1979
Tongue
English
Weight
282 KB
Volume
50
Category
Article
ISSN
1588-2780

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Polyethylene samples implanted with 150 keV F+ ions to the doses 1011-1015 cm-' were doped with iodine by exposing them to iodine vapors a t 90Β°C for 3 h. The iodine depth profiles, measured by Rutherford back-scattering techniques, evolve dramatically with increasing implanted doses, from "bumpy" p