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Modification of magnetron sputtered a-Si1−xCx:H films by implantation of Ge+

✍ Scribed by N. Tzenov; D. Dimova-Malinovska; Ts. Marinova; V. Krastev; T. Tsvetkova

Book ID
113287436
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
616 KB
Volume
112
Category
Article
ISSN
0168-583X

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Hydrogenated amorphous SiC films (a-Si 1-x C x :H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si 1-x C x :H film was realized under a mixture of argon and hydro