## Abstract This paper describes the application of the boundary element method to solving twoโdimensional steady slow viscous flow problems (creeping flow) in thermal silicon oxidation. The proposed method used the velocityโpressure formulation. The use of the incompressibility condition as a boun
Modellization of the silicon rapid thermal oxidation in the initial stages according to the silicon fragments model
โ Scribed by J.-J. Ganem; S. Rigo; I. Trimaille
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 383 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0167-9317
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