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Modelling the gas-sensing behaviour of SnO2-gate FETs

✍ Scribed by S.K. Andreev; L.I. Popova; V.K. Gueorguiev; N.D. Sotyanov

Book ID
103960528
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
318 KB
Volume
19
Category
Article
ISSN
0925-4005

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✍ L.I. Popova; S.K. Andreev; V.K. Gueorguiev; N.D. Stoyanov πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 221 KB

SnO,-gate FETs with ammonia-sensing behaviour are investigated at constant ammonia concentration (100 ppm) and different bias conditions. Strong dependence of the sensing behaviour on the drain and gate voltage (Vn, Vo) applied is observed. The current response obtained could be positive, negative o