𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Modelling of the formation of buried dielectric layers by ion implantation

✍ Scribed by H.U. Jäger


Book ID
113282515
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
717 KB
Volume
65
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Evolution of buried compound layers form
✍ Alice E. White; Kenneth T. Short; Yong-Fen Hsieh; Robert Hull 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 1010 KB

The coalescence of buried silicide layers formed by high dose implantation in silicon and high temperature annealing occurs via a precipitate coarsening mechanism that is different in ( 100) and ( 111) silicon. The results of an extensive study of these phenomena are summarized and compared with the