High power picosecond pulse generation from a two-contact tapered two quantum well 980 nm InGaAs / GaAs diode laser is investigated using a passive Q-switching technique for the first time. Tail-free and single peak Q-switched pulses are obtained by applying reverse bias voltages in the range of 0 t
Modelling of experimentally measured Q-switched pulsations in InGaAs/GaAs diode lasers
โ Scribed by B. Cakmak
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 414 KB
- Volume
- 266
- Category
- Article
- ISSN
- 0030-4018
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โฆ Synopsis
A numerical calculation of a passively Q-switched two-section ridge-waveguide InGaAs/GaAs diode laser is presented in this study. The author has modelled the output power-current (L-I) variation under cw conditions, time evolution of photon numbers under transient conditions and Q-switched pulses of the device for various reverse bias voltages to the absorber section. Resulting simulations of the L-I characterisation and Q-switched pulsations are compared quantitatively with experimental results. Simulated Q-switched pulse profiles have been obtained in the absence and presence of noise. In both cases, proposed model shows that a tail occurring at the end of the Q-switched pulse is eliminated at ร7.5 V reverse bias voltage, which is confirmed by experiment. As a result, experimentally obtained tailfree and single peak picosecond Q-switched pulses with peak powers of $1 W and durations of typically tens of picoseconds are also demonstrated theoretically. Simulations show consistency with the experimental data.
๐ SIMILAR VOLUMES
A passively Q-switched mode-locking of continuous wave diode-pumped Tm,Ho:YVO4 laser by use of In-GaAs/GaAs as a saturable absorber is reported for the first time as the author's know. The maximum Q-switched mode-locking output power was 210 mW at a wavelength of 2.05 ฮผm with pulse repetition freque