The applicability of the NLD plasma etching apparatus to the 0.1 m wafer process was verified through the experiments. The uniformity of the SiO etch rate was obtained within 1.6% (3% as 3 value) on 200 mm wafer, by applying a functional current to the magnetic coil with 0.1 Hz. A super-fine trench
✦ LIBER ✦
Modelling of discharges and non-thermal plasmas—applications to plasma processing
✍ Scribed by J.P. Boeuf; L.C. Pitchford; A. Fiala; Ph. Belenguer
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 986 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0257-8972
No coin nor oath required. For personal study only.
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