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Modelling and control of plasma etching processes in the semiconductor industry

✍ Scribed by H. Meng; P.C. Russell; P.J.G. Lisboa; G.R. Jones

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
294 KB
Volume
37
Category
Article
ISSN
0360-8352

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✦ Synopsis

Al?~ract --Despite its widespread use, plasma etching remains a poorly understood operation. Using chromatic monitor to measure key plasma parameters, the etch process was characterised using response surface methodology. In order to develop control-oriented models, open-loop dynamic testing was carried out. Dynamic models of a RIE system were developed using both standard system identification algorithms and neural network techniques.

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Run-to-run control of a plasma etch process for 8 inch diameter silicon wafers at Digital Semiconductor is determined by maintenance of targeted values of post-etch metrology variables. The post-etch quality variables are extremely sensitive to variation in the etch chamber conditions due to fluctua