✦ LIBER ✦

Modeling the infrared reflectance of n–/n+ SiC layers on top of n+ SiC substrates for epitaxy control application

✍ Scribed by Camassel, J. ;Pernot, J. ;Wang, H. Y. ;Peyre, H.

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 316 KB
Volume: 195
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200306265

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth and doping of SiC-thin films on l

Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications

✍ L. Cheng; M. Pan; J. Scofield; A. J. Steckl 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 369 KB

Growth of n-GaAs layer on a rough surfac

Growth of n-GaAs layer on a rough surface of p-Si substrate by molecular beam epitaxy (MBE) for photovoltaic applications

✍ B. Azeza; L. Sfaxi; R. M'ghaieth; A. Fouzri; H. Maaref 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 749 KB

The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to reduce the tensile stress in GaAs layer grown on Si substrate. We have reviewed the initial stage and the recombination of GaAs epitaxial layer

Influence of silicon and carbon excesses

Influence of silicon and carbon excesses on the aqueous dispersion of SiC nanocrystals for optical application

✍ J. Bouclé; N. Herlin-Boime; A. Kassiba 📂 Article 📅 2005 🏛 Springer Netherlands 🌐 English ⚖ 436 KB