Modeling the gate bias dependence of contact resistance in staggered polycrystalline organic thin film transistors
✍ Scribed by Vincenzo Vinciguerra; Manuela La Rosa; Donata Nicolosi; Giovanni Sicurella; Luigi Occhipinti
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 555 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1566-1199
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We report a study on the contact resistance instability induced by the bias stress in staggered pentacene thin film transistors, combining the bias stress measurements with the transfer line method. The contact resistance is increasing with the stress time, and two device parameters are found to con
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