Analytical modeling of the contact resistance in top gate/bottom contacts organic thin film transistors
✍ Scribed by Stéphane Altazin; Raphaël Clerc; Romain Gwoziecki; Damien Boudinet; Gérard Ghibaudo; Georges Pananakakis; Isabelle Chartier; Romain Coppard
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 657 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1566-1199
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We report a study on the contact resistance instability induced by the bias stress in staggered pentacene thin film transistors, combining the bias stress measurements with the transfer line method. The contact resistance is increasing with the stress time, and two device parameters are found to con
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