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Modeling the Electrothermal Stability of Power MOSFETs During Switching Transients

✍ Scribed by Alatise, Olayiwola; Parker-Allotey, Nii-Adotei; Mawby, Phil


Book ID
121232208
Publisher
IEEE
Year
2012
Tongue
English
Weight
366 KB
Volume
33
Category
Article
ISSN
0741-3106

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## Abstract This paper concerns the problem of modelling of power MOS transistors in SPICE. In the paper the new form of the electrothermal d.c. model (ETM) of the considered class of power devices is proposed. The ETM is based on the modified Shichman–Hodges model, in which the generation current,