function using GaAs MEFETrHEMT or Si NMOS technologies, and its lower sensitivity to common-mode components of the inputs even allows the use of single-ended input signals, which is not possible with the original topology. A model has been found to compare the proposed topology and the original one
Modeling the electrostatic and band-mixing effects on gain for double-quantum-well lasers
✍ Scribed by P. Weetman; M. S. Wartak; M. Kucharczyk
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 155 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The simultaneous role of electrostatic effects and band‐mixing effects on optical modal gain in two coupled wells is analyzed within the self‐consistent solution of the Poisson and Luttinger–Kohn effective‐mass equations. The analysis is performed for a 1.3‐μm InGaAsP/InP lattice‐matched system. It shows that the electrostatic effects play a significant role in selecting the optimum barrier width and composition of the wells and barriers. The gain is actually larger when electrostatic effects are included because of better charge localization in the wells. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 33: 35–37, 2002; DOI 10.1002/mop.10223
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