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Modeling the base current of an a-Si:H/c-Si heterojunction bipolar transistor

✍ Scribed by O. Bonnaud; M. Sahnoune; A. Solhi; H. Lhermite

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
462 KB
Volume
35
Category
Article
ISSN
0038-1101

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Effect of Ge content and profile in the
Effect of Ge content and profile in the SiGe base on the performance of a SiGe/Si heterojunction bipolar transistor
✍ Mukul K. Das; N. R. Das; P. K. Basu πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 217 KB

In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well