Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown

✍ Scribed by Miranda, E.; Kawanago, T.; Kakushima, K.; Suñé, J.; Iwai, H.

• Book ID: 122462182
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 507 KB
• Volume: 109
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2013.03.030