𝔖 Bobbio Scriptorium
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Modeling of the distributed gate RC effect in MOSFET's

✍ Scribed by Kim, L.-S.; Dutton, R.W.


Book ID
119777991
Publisher
IEEE
Year
1989
Tongue
English
Weight
276 KB
Volume
8
Category
Article
ISSN
0278-0070

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Compact modeling of quantum effects in s
✍ Wei Wang; Huaxin Lu; Jooyoung Song; Shih-Hsien Lo; Yuan Taur πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 336 KB

Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion