2505. Thermal aging of Al thin films on
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Article
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1977
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Elsevier Science
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English
β 150 KB
conduction band potential obtained from the threshold measurements shows only a small deviation from a fiat band, less than β’ i 0.05 eV, tip to a point 4 A, from the silicon surface. There is no indication of a large ionic charge or of a greatly reduced SiO, bandgap to within about two lattice units