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Modeling of minority-carrier surface recombination velocity at low-high junction of an n+-p-p+ silicon diode

✍ Scribed by Singh, S.N.; Singh, P.K.

Book ID: 114537330
Publisher: IEEE
Year: 1991
Tongue: English
Weight: 736 KB
Volume: 38
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.69915

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