In recent years, silicon germanium (SiGe) has become one of the most promising materials for the fabrication of heterojunction bipolar transistor, metal-oxide-semiconductor (MOS) field-effect transistor (FET), and optoelectronic devices [1-3]. Among these devices, the MOS device is the most interest
โฆ LIBER โฆ
Modeling of low temperature SiGe oxidation
โ Scribed by S.S. Mane; S. Hameed; A.R. Saha; C.K. Maiti
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 322 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
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