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Modeling of chemical vapor deposition: II. Gas phase epitaxy of (100) GaAs

✍ Scribed by J. Korec; M. Heyen

Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
718 KB
Volume
60
Category
Article
ISSN
0022-0248

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Selective Growth of Cubic GaN on Pattern
Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
✍ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 180 KB πŸ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl